temperature and file materials forming the contact (C) 2009 Amer

temperature and file materials forming the contact. (C) 2009 American Institute of Physics. [doi. 10.1063/1.3247195]“
“The following articles are being highlighted as part of Circulation: Cardiovascular selleck chemical Genetics’ Topic Review series. This series will summarize the most important manuscripts, as selected by the editors, published in the Circulation portfolio and Circulation: Cardiovascular Genetics, in particular. The studies included in this article represent the most read manuscripts published on the topic of cardiovascular risk factors in 2010 and 2011. (Circ Cardiovasc Genet. 2012;5:e38-e47.)”
“Aim:

To

evaluate the outcome of breast-conserving treatment including adjuvant radiotherapy in patients with multifocal or multicentric breast cancers.

Methods:

Between February 1996 and January 2002 13 patients presented with multifocal or multicentric breast tumors underwent breast-conserving therapy. Their median age was 44 years (range; 32-56). Nine patients had T1 disease and four had T2 disease. Nodal involvement was confirmed in three patients. All patients

had breast-conserving surgery and axillary lymph node dissection with clear resection margin. Whole breast irradiation was given up to 50.4 Gy in 28 fractions followed by 10 Gy boost to tumor bed. Twelve patients received adjuvant systemic therapy: chemotherapy in four patients, hormonal therapy selleck chemicals in five patients and both in three patients.

Results:

At a median follow-up duration of 70 months, all patients were alive without evidence of disease. The cosmetic outcome was evaluated in 11 patients. Cosmesis was GANT61 purchase excellent in two patients, good in six patients and fair in three

patients.

Conclusion:

Multifocal and/or multicentric breast cancers can be successfully treated with breast-conserving surgery and adjuvant radiotherapy when complete microscopic resection and contemporary systemic therapy are given.”
“A material allowing for rapid and reliable formation of nanopatterned surfaces is an important issue in many areas of science today. Self-organized pattern formation induced by ion erosion is a promising bottom-up approach. In the case of the III-V semiconductors, this method can lead to several remarkable structure types even if the formation mechanism has yet to be found. Through high resolution chemical scanning, transmission electron imaging, and x-ray photo emission. we show through an investigation of GaSb that the capacity of III-V semiconductors to pattern tinder ion erosion is linked to the phase diagram of these materials We suggest an original scenario to explain the specific behavior of III-V semiconductors. where one species segregates and acts as a continuously resupplied etching shield This concept is at variance with the standard Bradley-Harper model and opens interesting perspectives for bottom-up patterning of compound materials. (C) 2009 American Institute of Physics.

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